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| PRELIMINARY CGH2705F 5 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree's CGH27015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX and BWA amplifier applications. The transistor is available in ceramic, metal flange package. Package Type : 440166 PN: CGH2701 5F Typical Performance 2.4-2.7 GHz Parameter Small Signal Gain POUT @ 2.0 % EVM Drain Efficiency @ 2.0 % EVM Input Return Loss Output Return Loss 2.4 GHz 14.5 34.0 23.0 7.0 5.0 (TC = 25C) 2.5 GHz 14.5 34.0 24.0 6.0 6.0 2.6 GHz 14.5 34.0 24.0 5.0 7.0 2.7 GHz 14.5 34.0 23.0 5.0 7.0 Units dB dBm % dB dB Note: Measured in the CGH27015F-TB amplifier circuit, under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3. Features * * * * * 2007 Rev .7 - May 2.3 - 2.9 GHz Operation >14.5 dB Small Signal Gain >2.0 W POUT at 2.0 % EVM 25 % Efficiency at 2.5 % EVM WiMAX Fixed Access 802.16-2004 OFDM WiMAX Mobile Access 802.16e OFDMA * Subject to change without notice. www.cree.com/wireless Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Soldering Temperature Thermal Resistance, Junction to Case 1 Symbol VDSS VGS TSTG TJ TS RJC Rating 84 -10, +2 -55, +150 175 245 5.0 Units Volts Volts C C C C/W Note: 1 Measured for the CGH27015F at PDISS = 14W. Electrical Characteristics (TC = 25C) Characteristics DC Characteristics 4 Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage Gate Quiescent Voltage Saturated Drain Current Drain-Source Breakdown Voltage Case Operating Temperature Screw Torque VGS(th) VGS(Q) IDS VBR TC T -3.0 - 2.4 84 -10 - -2.5 -2.45 2.7 100 - - -1.8 - - - +105 60 VDC VDC A VDC C in-oz VDS = 10 V, ID = 3.6 mA VDS = 28 V, ID = 60 mA VDS = 6.0 V, VGS = 2.0 V VGS = -8 V, ID = 3.6 mA Reference 440166 Package Revision 3 RF Characteristics2,3 (TC = 25C, F0 = 2.5 GHz unless otherwise noted) Small Signal Gain Drain Efficiency1 Back-Off Error Vector Magnitude Error Vector Magnitude Output Mismatch Stress Dynamic Characteristics Input Capacitance Output Capacitance Feedback Capacitance CGS CDS CGD - - - 5.00 1.32 0.43 - - - pF pF pF VDS = 28 V, Vgs = -8 V, f = 1 MHz VDS = 28 V, Vgs = -8 V, f = 1 MHz VDS = 28 V, Vgs = -8 V, f = 1 MHz GSS 13 20 - - - 14.5 21 2.5 2.0 10:1 - - - dB % % % Y VDD = 28 V, IDQ = 60 mA VDD = 28 V, IDQ = 60 mA, PAVE = 2.0 W VDD = 28 V, IDQ = 60 mA, PAVE = 18 dBm VDD = 28 V, IDQ = 60 mA, PAVE = 2.0 W No damage at all phase angles, VDD = 28 V, IDQ = 60 mA, PAVE = 2.0 W OFDM PAVE EVM1 EVM2 VSWR Notes: 1 Drain Efficiency = POUT / PDC 2 Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3. 3 Measured in the CGH27015F-TB test fixture. 4 Measured on wafer prior to packaging. Copyright (c) 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGH2705F Rev .7 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless Typical Performance Data Typical EVM and Efficiency of CGH27015F in Broadband Amplifier Circuit at 2.5 GHz F=2.5 GHz, 802.16-2004 OFDM, P/A=9.8 dB 5.0 EVM(2.5) 4.0 Eff(2.5) 20 25 EVM (%) 3.0 15 2.0 10 1.0 5 0.0 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 0 Average Output Power (dBm) Note: Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3. Typical Constellation Chart, Spectral Mask, and EVM of CGH27015F in Broadband Amplifier Circuit at 2.5 GHz VDD = 28 V, IDQ = 60 mA, PAVE = 2.0 W Efficiency (%) Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless Copyright (c) 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGH2705F Rev .7 Preliminary Typical Performance Data Typical EVM and Efficiency at 22dB and 33 dB vs Frequency of CGH27015F in Broadband21 dBm vs. Frequency Amplifier Circuit WiMAX EVM & Efficiency at 33 and 3.5 28 3.0 24 2.5 20 EVM (%) 2.0 16 1.5 12 1.0 EVM (33dBm) EVM (21dBm) Efficiency (33dBm) 8 0.5 4 0.0 2.3 2.4 2.5 2.6 2.7 0 Frequency (GHz) Note: Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3. Performance of CGH27015F in Broadband Amplifier Circuit VDD = 28 V, IDQ = 60 mA, OFDM BW = 3.5 MHz Efficiency (%) Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless Copyright (c) 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGH2705F Rev .7 Preliminary Product Dimensions CGH27015F (Package Type -- 440166) PRELIMINARY Copyright (c) 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGH2705F Rev .7 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless CGH27015F-TB Demonstration Amplifier Circuit Schematic CGH27015F-TB Demonstration Amplifier Circuit Outline 3-000532 REV 3 CGH27015-TB Copyright (c) 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGH2705F Rev .7 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless CGH27015F-TB Demonstration Amplifier Circuit Bill of Materials Designator R1,R2 R4 R3 C6 C17 C16 C8 C14 C4 C1 C2 C10,C11 C5,C13 C7,C15 J3,J4 J2 J1 Q1 Description RES,1/16W,0603,1%,0 OHMS RES,1/16W,0603,1%,100 OHMS RES,1/16W,0603,1%,22.6 OHMS CAP, 470PF, 5%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 100.0pF, +/-5%, 0603 CAP, 15pF, +/-5%, 0603 CAP, 1.2pF, +/-0.1pF, 0603 CAP, 2.0pF, +/-0.1pF, 0603 CAP, 2.4pF,+/-0.1pF, 0603 CAP, 39pF, +/-5%, 0603 CAP,33000PF, 0805,100V, X7R CONN SMA STR PANEL JACK RECP HEADER RT>PLZ.1CEN LK 2 POS HEADER RT>PLZ .1CEN LK 5POS CGH27015F Qty 2 1 1 1 1 1 1 1 1 1 1 2 2 2 1 1 1 1 CGH27015F-TB Demonstration Amplifier Circuit Copyright (c) 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGH2705F Rev .7 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. "Typical" parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer's technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, NC 27703 www.cree.com/wireless Ryan Baker Marketing Cree, Wireless Devices 919.287.7816 Tom Dekker Sales Director Cree, Wireless Devices 919.313.5639 Copyright (c) 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGH2705F Rev .7 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless |
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